Investigation of clusters magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method
ID:91 Submission ID:87 View Protection:ATTENDEE Updated Time:2023-04-03 13:21:54 Hits:484 Oral Presentation

Start Time:2023-06-11 17:25 (Asia/Shanghai)

Duration:15min

Session:[S1] Concurrent Session 1 » [S1-7] Concurrent Session 1-7 & 1-8

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Abstract
Magnetorheological electro-Fenton composite polishing technology is a new processing method that uses the synergy of electro-Fenton reaction and magnetorheological polishing flexible mechanical removal to achieve high efficiency polishing of GaN. To reveal the effect of different electro-Fenton parameters on the generation of hydroxyl radicals (⋅OH) and to explore the optimal process parameters for the magnetorheological electro-Fenton composite polishing of single crystal GaN clusters, methyl orange degradation experiments were designed by the Box-Behnken design (BBD) method. The effects of three electro-Fenton parameters, namely H2O2 concentration, Fe-C concentration and pH value, on the variation pattern of hydroxyl radical (⋅OH) concentration were investigated. The prediction function of the degradation rate of methyl orange under the electro-Fenton system was constructed and the reliability of the prediction function was verified, so that the electro-Fenton parameters could be optimised. The effect of different polishing process parameters (abrasive particle size, concentration and polishing time) on the surface quality of GaN wafers is investigated with the objective of optimising the polishing process parameters. The results showed that there was a maximum value of 94.3% degradation of methyl orange at a concentration of 4.8 wt% H2O2, 3.4 wt% Fe-C and pH=3.3. The GaN was polished for 1 h with an abrasive type of diamond, an abrasive grain size of 500 nm and an abrasive concentration of 3 wt%. Magnetorheological electro-Fenton compound polishing was able to reduce the surface roughness from Ra 15 nm to Ra 1.2 nm with a material removal rate of up to 10.79 μm/h.
Keywords
Gallium nitride (GaN),Magnetorheological polishing,Electro-Fenton,Hydroxyl radicals,Response surface methodology
Speaker
Qiongbin Zheng
None Guangdong University of Technology

Submission Author
Qiongbin Zheng Guangdong University of Technology
Jisheng Pan Guangdong University of Technology
Yusen Wu Guangdong University of Technology
Min Xiang Guangdong University of Technology
Hao Wang Guangdong University of Technology
Qiusheng Yan Guangdong University of Technology
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